Ex) Article Title, Author, Keywords
Current Optics
and Photonics
Ex) Article Title, Author, Keywords
Journal of the Optical Society of Korea 2015; 19(6): 619-628
Published online December 25, 2015 https://doi.org/10.3807/JOSK.2015.19.6.619
Copyright © Optical Society of Korea.
Wooshik Kim1 and Min-Chul Park2
In this paper, we consider a method for estimating a stripe-type defect and the reconstruction of a defect-free L/S type mask used in lithography. Comparing diffraction patterns of defected and defect-free masks, we derive equations for the estimation of the location and size of the defect. We construct an analytical model for this problem and derive closed form equations to determine the location and size using phase retrieval problem solving techniques. Consequently, we develop an algorithm that determines a defect-free mask pattern. An example shows the validity of the equations.
Keywords: EUVL (Extreme ultraviolet lithography), Phase retrieval,
OCIS codes: 100.5070; 110.4235; 340.7480